PLANAR N-GAAS-N-GAALAS MICROWAVE DIODES

被引：5

作者：

LECHNER, A

KNEIDINGER, M

KUCH, R

机构：

来源：

ELECTRONICS LETTERS | 1980年 / 16卷 / 01期

关键词：

D O I：

10.1049/el:19800001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Planar microwave diodes have been fabricated from n-GaAs/N-(GaAl)As heterojunction layers grown on semi-insulating substrates by l. p. e. The diodes have been used successfully for detection and for down-conversion of X- and Ku-band signals, indicating that this type of diode is an attractive substitute for the Schottky-barrier diode.

引用

页码：1 / 2

页数：2