MONOLITHIC INTEGRATION OF AN INJECTION-LASER AND A METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR

被引：62

作者：

URY, I

MARGALIT, S

YUST, M

YARIV, A

机构：

来源：

APPLIED PHYSICS LETTERS | 1979年 / 34卷 / 07期

关键词：

D O I：

10.1063/1.90824

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：430 / 431

页数：2

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[1] HIGH-TEMPERATURE SINGLE-MODE CW OPERATION WITH A JUNCTION-UP TJS']JS-LASER
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[J]. APPLIED PHYSICS LETTERS, 1978, 33 (01) : 38 - 39
[2] INTEGRATION OF AN INJECTION-LASER WITH A GUNN OSCILLATOR ON A SEMI-INSULATING GAAS SUBSTRATE
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[J]. APPLIED PHYSICS LETTERS, 1978, 32 (12) : 806 - 807
[3] DOUBLE-HETEROSTRUCTURE GAAS-GAAIAS INJECTION-LASERS ON SEMI-INSULATING SUBSTRATES USING CARRIER CROWDING
LEE, CP
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[J]. APPLIED PHYSICS LETTERS, 1977, 31 (04) : 281 - 282
[4] GAAS-GAALAS INJECTION-LASERS ON SEMI-INSULATING SUBSTRATES USING LATERALLY DIFFUSED JUNCTIONS
LEE, CP
MARGALIT, S
URY, I
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[J]. APPLIED PHYSICS LETTERS, 1978, 32 (07) : 410 - 412
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[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (06) : 279 - 330
[6] MESA-STRIPE-GEOMETRY DOUBLE-HETEROSTRUCTURE INJECTION LASERS
TSUKADA, T
ITO, R
NAKASHIM.H
NAKADA, O
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (02) : 356 - 361