CHARACTERIZATION OF THE IMPLANTATION DAMAGE IN SIO2 WITH X-RAY PHOTOELECTRON-SPECTROSCOPY

被引：17

作者：

AJIOKA, T

USHIO, S

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 20期

关键词：

D O I：

10.1063/1.96921

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1398 / 1399

页数：2

共 15 条

[1] CHANGES IN THE OPTICAL REFLECTIVITY OF IMPLANTED SILICON AS A FUNCTION OF IMPLANTATION ENERGY [J].

AHARONI, H ;

SWART, PL .

APPLIED PHYSICS LETTERS, 1984, 44 (09) :892-894

[2]

Bayly A. R., 1973, Radiation Effects, V18, P111, DOI 10.1080/00337577308234725

[3] STRUCTURE OF VITREOUS-SILICA - VALIDITY OF RANDOM NETWORK THEORY [J].

BELL, RJ ;

DEAN, P .

PHILOSOPHICAL MAGAZINE, 1972, 25 (06) :1381-&

[4] RADIATION-DAMAGE ENHANCEMENT OF THE PENETRATION OF WATER INTO SILICA GLASS [J].

BURMAN, C ;

LANFORD, WA .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2312-2315

[5] RADIATION-DAMAGE IN ION-IMPLANTED QUARTZ CRYSTALS .2. ANNEALING BEHAVIOR [J].

FISCHER, H ;

GOTZ, G ;

KARGE, H .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 76 (02) :493-498

[6]

GEVASIMENKO NN, 1980, PHYS STATUS SOLIDI A, V62, pK169

[7] RADIATION-INDUCED DEFECTS IN SIO2 AS DETERMINED WITH XPS [J].

GRUNTHANER, FJ ;

GRUNTHANER, PJ ;

MASERJIAN, J .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) :1462-1466

[8] AN XPS STUDY OF THE INFLUENCE OF ION SPUTTERING ON BONDING IN THERMALLY GROWN SILICON DIOXIDE [J].

HOFMANN, S ;

THOMAS, JH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (01) :43-47

[9] CHEMICAL BOND AND RELATED PROPERTIES OF SIO2 .1. CHARACTER OF CHEMICAL BOND [J].

HUBNER, K .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 40 (01) :133-140

[10] RADIATION DEFECTS AND OPTICAL-PROPERTIES OF ION-IMPLANTED SILICON DIOXIDE [J].

KATENKAMP, U ;

KARGE, H ;

PRAGER, R .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 48 (1-4) :31-34

← 1 2 →