A MODEL FOR THE BIPOLAR-LIKE RESPONSE OF GAAS-MESFETS TO A HIGH-DOSE-RATE ENVIRONMENT

被引：2

作者：

ISLAM, NE ^{[1
]}

HOWARD, JW ^{[1
]}

FAGEEHA, O ^{[1
]}

BLOCK, RC ^{[1
]}

BECKER, M ^{[1
]}

机构：

[1] OREGON GRAD INST, PORTLAND, OR USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1994年 / 41卷 / 06期

关键词：

D O I：

10.1109/23.340607

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A model for bipolar mechanism, initiated in some MESFETs during a radiation transient is presented. It differs from other models in ifs postulation that the 'neutral base' is formed during the transient and is not present during normal device operation. The response mechanism is due to the geometry of the device and does not depend on its material properties.

引用

页码：2494 / 2501

页数：8

共 14 条

[1] CHARGE COLLECTION FROM FOCUSED PICOSECOND LASER-PULSES [J].

BUCHNER, S ;

KNUDSON, A ;

KANG, K ;

CAMPBELL, AB .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1988, 35 (06) :1517-1522

[2] ION INDUCED CHARGE COLLECTION IN GAAS-MESFETS [J].

CAMPBELL, A ;

KNUDSON, A ;

MCMORROW, D ;

ANDERSON, W ;

ROUSSOS, J ;

ESPY, S ;

BUCHNER, S ;

KANG, K ;

KERNS, D ;

KERNS, S .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1989, 36 (06) :2292-2299

[3]

DEFERIN L, 1989, IEEE T ELECTR DEVICE

[4] GATE CHARGE COLLECTION AND INDUCED DRAIN CURRENT IN GAAS-FETS [J].

FLESNER, LD .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) :4110-4114

[5] EXPERIMENTS AND MODELING OF THE PHOTOCURRENT RESPONSE OF GAAS-MESFETS [J].

HOWARD, JW ;

ISLAM, NE ;

ISHAQUE, AN ;

BLOCK, RC ;

BECKER, M ;

CHANG, JY ;

STAUBER, M .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1990, 37 (06) :2050-2057

[6]

HOWARD JW, 1990, THESIS RENSSELAER PO

[7]

KIRK CT, 1962, IRE T ELECTRON DEV, V9, P164

[8] PULSED LASER-INDUCED CHARGE COLLECTION IN GAAS-MESFETS [J].

KNUDSON, AR ;

CAMPBELL, AB ;

MCMORROW, D ;

BUCHNER, S ;

KANG, K ;

WEATHERFORD, T ;

SRINIVAS, V ;

SWARTZLANDER, GA ;

CHEN, YJ .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1990, 37 (06) :1909-1915

[9] BUILT-IN SPACE-CHARGE AT JUNCTIONS BETWEEN HEAVILY DOPED AND SEMI-INSULATING GAAS-LAYERS [J].

LEHOVEC, K ;

PAO, H .

SOLID-STATE ELECTRONICS, 1988, 31 (09) :1433-1440

[10]

NISHIZAWA J, 1978, IEDM, P676

← 1 2 →