MAGNETIC-ORDERING OF MN OVERLAYS ON GAAS(100)

被引：15

作者：

JIN, X

ZHANG, M

DONG, GS

CHEN, Y

U, M

ZHU, XG

WANG, X

LU, ED

PAN, HB

XU, PS

ZHANG, XY

FAN, CY

机构：

[1] FUDAN UNIV,SURFACE PHYS LAB,SHANGHAI 200433,PEOPLES R CHINA

[2] ZHEJIANG UNIV,DEPT PHYS,HANGZHOU,PEOPLES R CHINA

[3] UNIV SCI & TECHNOL CHINA,NATL SYNCHROTRON RADIAT LAB,HEFEI,PEOPLES R CHINA

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 13期

关键词：

D O I：

10.1103/PhysRevB.50.9585

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Growth of Mn on GaAs(100) is studied by photoemission and electron-energy-loss spectroscopy. We find that the first layer of Mn grows on GaAs(100) in a two-dimensional mode, where about 10% of the Mn atoms take part in the chemical reaction with the substrate. The electronic structure of the ultrathin film of Mn is found to be very different from that of bulk alpha-Mn, and the possibility that magnetic ordering exists in the ultrathin overlayer of Mn is proposed.

引用

页码：9585 / 9588

页数：4

共 9 条

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DRUDE W, 1987, PHYS REV B, V35, P4131

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