HIGH-QUALITY ALXGA1-XN GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION USING TRIMETHYLAMINE ALANE AS THE ALUMINUM PRECURSOR

被引：17
作者：
KHAN, MA
OLSON, DT
KUZNIA, JN
机构：
[1] APA Optics Inc., Blaine, MN 55449
来源：
APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 01期
关键词：
D O I：
10.1063/1.113075
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the first low pressure (76 Torr) metalorganic chemical vapor deposition of AlxGa1-xN using trimethylamine alane (TMAAl) as the aluminum source. AlxGa1-xN epilayers deposited using TMAAl exhibited an excellent surface morphology and very strong room temperature photoluminescence. For AlN layers (using TMAAl as the aluminum precursor) we obtained a total carbon contamination level as low as 10(17) cm-3.
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页码：64 / 66
页数：3
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