HILLOCK-FREE INTEGRATED-CIRCUIT METALLIZATIONS BY AL-AL-O LAYERING

被引：24

作者：

FAITH, TJ

机构：

来源：

关键词：

D O I：

10.1063/1.329343

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4630 / 4639

页数：10

共 24 条

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[4]

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[5]

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[6] ALUMINUM FILMS DEPOSITED BY RF SPUTTERING [J].

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METALLURGICAL TRANSACTIONS, 1970, 1 (03) :725-&

[7] MONOLAYER ADSORPTION OF OXYGEN ON ALUMINIUM [J].

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[8]

DUSHMAN S, 1962, SCI F VACUUM TECHNIQ

[9]

FAITH TJ, UNPUBLISHED

[10]

HARTSOUGH LD, 7901 PERK ELM ULT DI