STRUCTURAL AND ELECTRONIC-PROPERTIES OF CLEAVED SI(111) UPON ROOM-TEMPERATURE FORMATION OF AN INTERFACE WITH AG

被引：85
作者：
BOLMONT, D
CHEN, P
SEBENNE, CA
PROIX, F
机构：
来源：
PHYSICAL REVIEW B | 1981年 / 24卷 / 08期
关键词：
D O I：
10.1103/PhysRevB.24.4552
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
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页码：4552 / 4559
页数：8
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