STRUCTURE DEPENDENT MODULATION RESPONSES IN QUANTUM-WELL LASERS

被引：57
作者：
TESSLER, N
NAGAR, R
EISENSTEIN, G
机构：
[1] Department of Electrical Engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1992年 / 28卷 / 10期
关键词：
D O I：
10.1109/3.159531
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present a three level rate equation model describing structural dependent modulation bandwidth limitations in quantum-well lasers. We demonstrate an enhanced damping as well as a capacitive-like rolloff in the modulation response due to the transport time and carrier injection bottle-neck. We show that for relatively short transport times, the dominant effect is that of damping and we calculate an approximated explicit expression for a structure dependent nonlinear gain compression coefficient.
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收藏
页码：2242 / 2250
页数：9
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