CW OPERATION OF AN INGAASP/INP GAIN-COUPLED DISTRIBUTED FEEDBACK LASER WITH A CORRUGATED ACTIVE LAYER

被引：22

作者：

INOUE, T ^{[1
]}

NAKAJIMA, S ^{[1
]}

LUO, Y ^{[1
]}

OKI, T ^{[1
]}

IWAOKA, H ^{[1
]}

NAKANO, Y ^{[1
]}

TADA, K ^{[1
]}

机构：

[1] UNIV TOKYO,DEPT ELECTR ENGN,TOKYO 113,JAPAN

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 11期

关键词：

D O I：

10.1109/68.97825

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A low-threshold CW-operable gain-coupled distributed feedback laser having a corrugated active layer is realized with InGaAsP/InP materials for the first time by implementing reactive ion etching and organometallic vapor phase epitaxy. Planar buried heterostructure devices exhibit excellent single-longitudinal-mode oscillation, independent of facet reflection. Threshold currents as low as 12 mA and side mode suppression ratios as high as 55 dB are demonstrated at a wavelength of 1.55-mu-m.

引用

页码：958 / 960

页数：3

共 13 条

[1] YIELD ANALYSIS OF NON-AR-COATED DFB LASERS WITH COMBINED INDEX AND GAIN COUPLING [J].