DOPING OF NITROGEN ACCEPTORS INTO ZNSE USING A RADICAL BEAM DURING MBE GROWTH

被引:164
作者
OHKAWA, K
KARASAWA, T
MITSUYU, T
机构
[1] Central Research Laboratories, Matsushita Electric Ind. Co., Ltd., Moriguchi, Osaka
关键词
D O I
10.1016/0022-0248(91)91084-N
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
A new method of doping for ZnSe was attempted by using a neutral radical beam during the MBE growth. The radical beam dominantly consisted of N2 molecular radicals at A3-SIGMA-u+ state. The sticking coefficient of nitrogen was remarkably enhanced; thus this doping method was able to incorporate N into ZnSe by 10(19) cm-3. The existence of shallow N acceptors was confirmed by photoluminescence measurements; recombination of free electrons and acceptor holes (FA) at room temperature and recombination of donor-acceptor pairs at low-temperature were observed. The FA emission was observed only for ZnSe layers with moderate doping level, which shows p-type conduction. The carrier concentration was the order of 10(15) cm-3. The activation of N in ZnSe was less than 1%.
引用
收藏
页码:797 / 801
页数:5
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