PREPARATION OF FERROELECTRIC BATIO3 THIN-FILMS BY ACTIVATED REACTIVE EVAPORATION

被引：148

作者：

IIJIMA, K ^{[1
]}

TERASHIMA, T ^{[1
]}

YAMAMOTO, K ^{[1
]}

HIRATA, K ^{[1
]}

BANDO, Y ^{[1
]}

机构：

[1] KYOTO UNIV,INST CHEM RES,UJI,KYOTO 611,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 06期

关键词：

D O I：

10.1063/1.103300

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ferroelectric BaTiO3 thin films were directly and epitaxially grown on SrTiO3 single crystal and epitaxial Pt film substrates by activated reactive evaporation. The substrate temperature was around 600°C. For (100) oriented as-grown films, a typical ferroelectric hysteresis loop and a maximum of dielectric constant at about 115°C were observed. The resistivity was as high as 109 Ω cm and the breakdown voltage was 2.7 MV/cm for as-grown BaTiO3 films.

引用

页码：527 / 529

页数：3

共 21 条

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