EXTREMELY LOW NONALLOYED AND ALLOYED CONTACT RESISTANCE USING AN INAS CAP LAYER ON INGAAS BY MOLECULAR-BEAM EPITAXY

被引：20
作者：
PENG, CK
CHEN, J
CHYI, J
MORKOC, H
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 01期
关键词：
D O I：
10.1063/1.341210
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：429 / 431
页数：3
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