Photoluminescence and electrophysical properties of p-type ZnO layers implanted with V Group elements

被引：0

作者：

Kotlyarevsky, M. B. ^{[1
]}

Rogozin, I. V. ^{[2
]}

Marakhovsky, O. V. ^{[2
]}

机构：

[1] ARIU, Acad Management & Informat Technol, 3 Uritsky St, UA-71100 Berdyansk, Ukraine

[2] Berdyansk State Pedag Univ, UA-71100 Berdyansk, Ukraine

来源：

FUNCTIONAL MATERIALS | 2005年 / 12卷 / 04期

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ion implantation of arsenic and nitrogen into zinc oxide film (As and N being acceptor impurities in ZnO) has been shown to result in formation of the hole conductivity only if the film is annealed in the presence of oxygen radicals. The ion implantation and subsequent anneal influence not only the electric properties but also the photoluminescence spectra of ZnO:Ga:As+ (ZnO:Ga:N+) layers. The luminescence bands due to As and N introduction appear in the UV and visible spectral regions.

引用

页码：616 / 621

页数：6

共 19 条

[1]

Georgobiani A.N., 2004, P 8 C ASTR PART SPAC, P467

[2]

Georgobiani A.N., 2004, INORG MAT S1, V40, P51

[3]

Georgobiani A.N., 1997, IAN SSSR NEORG MATER, V33, P185

[4] p-Type ZnO:N obtained by ion implantation of nitrogen with post-implantation annealing in oxygen radicals [J].

Georgobiani, AN ;

Gruzintsev, AN ;

Volkov, VT ;

Vorobiev, MO ;

Demin, VI ;

Dravin, VA .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2003, 514 (1-3) :117-121

[5] Fabrication and optoelectronic properties of a transparent ZnO homostructural light-emitting diode [J].

Guo, XL ;

Choi, JH ;

Tabata, H ;

Kawai, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2001, 40 (3A) :L177-L180

[6] Nitrogen-induced defects in ZnO:N grown on sapphire substrate by gas source MBE [J].

Iwata, K ;

Fons, P ;

Yamada, A ;

Matsubara, K ;

Niki, S .

JOURNAL OF CRYSTAL GROWTH, 2000, 209 (2-3) :526-531

[7] Fabrication of the low-resistive p-type ZnO by codoping method [J].

Joseph, M ;

Tabata, H ;

Saeki, H ;

Ueda, K ;

Kawai, T .

PHYSICA B-CONDENSED MATTER, 2001, 302 :140-148

[8] p-type electrical conduction in ZnO thin films by Ga and N codoping [J].

Joseph, M ;

Tabata, H ;

Kawai, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1999, 38 (11A) :L1205-L1207

[9] First-principles study of native point defects in ZnO [J].

Kohan, AF ;

Ceder, G ;

Morgan, D ;

Van de Walle, CG .

PHYSICAL REVIEW B, 2000, 61 (22) :15019-15027

[10]

Kotlyarevsly M.B., 2005, FIZ TEKH POLUPROV, V39, P641

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