HIGH-ELECTRON-MOBILITY IN (INAS)N(GAAS)N SHORT-PERIOD SUPERLATTICES GROWN BY MOVPE FOR HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURE

被引：21
作者：
ANDRE, JP
DESWARTE, A
LUGAGNEDELPON, E
VOISIN, P
RUTERANA, P
机构：
[1] ECOLE POLYTECH,PHYS MAT CONDENSEE LAB,F-75230 PARIS 05,FRANCE
[2] UNIV CAEN,LERMAT,ISMRA,CNRS,URA 1317,F-14050 CAEN,FRANCE
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1994年 / 23卷 / 02期
关键词：
ELECTRON MOBILITY; (GAAS)N(INAS)N SHORT PERIOD SUPERLATTICES; HIGH-ELECTRON MOBILITY TRANSISTOR (HEMT) STRUCTURE; METALORGANIC VAPOR PHASE EPITAXY (MOVPE);
D O I：
10.1007/BF02655260
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
(InAs)n(GaAs)n short period superlattices (SPSs) have been successfully grown by a continuous MOVPE process on InP substrates. Their structural, optical, and electrical properties have been studied. The periodic structures have been confirmed by x-ray measurements and (InAs)1(GaAs)1 SPSs have been clearly observed by transmission electron microscopic characterization. The optical quality of the material has been tested by 2K photoluminescence and excitonic recombinations have been observed. Mobilities as high as 10700 CM2.V-1.s-1 an 64000 CM2. V-1.s-1 for a sheet concentration of 3 x 10(12) cm-2 have been obtained at 300K and 77K, respectively.
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页码：141 / 146
页数：6
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