ON THE INFLUENCE OF AN ULTRATHIN AL OVERLAYER ON GAAS PLASMA OXIDE-GROWTH KINETICS

被引:1
|
作者
PINCIK, E
LANYI, S
NADAZDY, V
机构
[1] Institute of Physics, Slovak Academy of Sciences, 842 28 Bratislava
关键词
D O I
10.1016/0040-6090(94)90083-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The growth rate of GaAs anodic oxide in radio-frequency plasma at low temperatures can be strongly affected by an ultrathin aluminum layer ( < 3 nm) evaporated on the semiconductor before oxidation. The effect of this layer on the properties of the resulting oxide-GaAs interface has been investigated. Comparing the structures grown by means of the Al overlayer to the sample with a pure native oxide, the corresponding deep level transient spectra differ markedly and the GaAs lattice contraction below the double oxide is reduced. Application of a fitting procedure to a simple layer growth model leads to interpretation of the investigated process by increasing both the migration coefficient of the negative oxygen ions in the oxide and concentration of O- ions on the dielectric surface during the oxidation procedure.
引用
收藏
页码:44 / 49
页数:6
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