DEEP LEVELS IN ALPHA-IRRADIATED PLATINUM DOPED N-TYPE SILICON

被引：4

作者：

ASGHAR, M

BABER, N

IQBAL, MZ

机构：

[1] Semiconductor Physics Laboratory, Department of Physics, Quaid-i-Azam University, Islamabad

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 04期

关键词：

D O I：

10.1063/1.357549

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The deep level transient spectroscopy technique has been used to study the interaction of 5.48 MeV a particles with deep levels in Pt-doped n-type silicon. Production rates and annealing behaviors of alpha-radiation-induced levels in the presence of platinum have been investigated. Isochronal annealing characteristics of Pt-related levels before and after irradiation have also been studied. Our results are compared to published data on electron irradiation of Si:Pt.

引用

页码：2553 / 2555

页数：3

共 14 条

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