DIRECT EVIDENCE FOR 1NM PORES IN DRY THERMAL SIO2 FROM HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY

被引：79

作者：

GIBSON, JM ^{[1
]}

DONG, DW ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 12期

关键词：

D O I：

10.1149/1.2129579

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2722 / 2728

页数：7

共 34 条

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