DIRECT EVIDENCE FOR 1NM PORES IN DRY THERMAL SIO2 FROM HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY

被引：79
作者：
GIBSON, JM [1 ]
DONG, DW [1 ]
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 12期
关键词：
D O I：
10.1149/1.2129579
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：2722 / 2728
页数：7
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