CURRENT INJECTION GAAS-ALXGA1-XAS MULTI-QUANTUM-WELL HETEROSTRUCTURE LASERS PREPARED BY MOLECULAR-BEAM EPITAXY

被引：91

作者：

TSANG, WT

WEISBUCH, C

MILLER, RC

DINGLE, R

机构：

[1] Bell Laboratories, Murray Hill

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 09期

关键词：

D O I：

10.1063/1.91241

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low-current-threshold room-temperature injection GaAs-AlxGa 1-xAs multi-quantum-well (MQW) lasers have been prepared by molecular beam epitaxy. Under pulsed current injection, lasing emission attributed to the n=1 electron-to-light-hole (1 e-lh) confined-particle transition was observed at threshold. Above threshold, lasing emission involving the n=1 electron-to-heavy-hole transition (1 e-hh) became dominant. Single longitudinal mode operation has also been observed for these broad-area MQW lasers. For heat-sink temperatures between 8 and 100°C, the lasing current threshold Ith for the 1 e-hh transition has an exponential variation with temperature of the form Ith∝ exp(T/T0), where T 0=230°K.

引用

页码：673 / 675

页数：3

共 12 条

[1]

Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[2]

DINGLE R, 1976, Patent No. 3982207

[3] GAAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURE INJECTION LASERS [J].