INDIUM-DOPED ZINC-OXIDE FILMS AS TRANSPARENT ELECTRODES FOR SOLAR-CELLS

Indium-doped zinc oxide films possess high conductivity and transparency with negligible absorption in the wavelength range of 0. 4-0. 8 mu m which is the useful region for hydrogenated amorphous silicon solar cells. These films are thermally stable in both oxidizing and reducing ambients up to approximately equals 800 K. These films do not degrade when exposed to hydrogen plasma. Pure ZnO films are rough, while In-doped ZnO films are very smooth. By making a double layer structure of In-doped ZnO/ZnO, the film surface has been texturized, which results in a large haze factor ( approximately equals 16 percent) at a wavelength of 0. 7 mu m.