SILICON MOS TRANSCONDUCTANCE SCALING INTO THE OVERSHOOT REGIME

被引：42
作者：
PINTO, MR [1 ]
SANGIORGI, E [1 ]
BUDE, J [1 ]
机构：
[1] UNIV BOLOGNA, I-40126 BOLOGNA, ITALY
来源：
IEEE ELECTRON DEVICE LETTERS | 1993年 / 14卷 / 08期
关键词：
D O I：
10.1109/55.225584
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Simulations incorporating velocity overshoot are used to derive the dependence of deep-submicrometer MOS transconductance on low-field mobility mu(eff) and channel length L(ch). In contrast to strict velocity saturation, saturated transconductance departs from a strict mu(eff)/L(ch) dependence when overshoot is considered. Constraints on mu(eff) derived from conventional scaling laws together with strong mu(eff) dependencies in these regimes emphasize the importance of low-field inversion layer control and optimization. Transconductance in saturation is shown to approach a well-defined limit for very high mu(eff), proportional to L(ch)-2/3.
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收藏
页码：375 / 378
页数：4
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