SILICON MOS TRANSCONDUCTANCE SCALING INTO THE OVERSHOOT REGIME

被引：42

作者：

PINTO, MR ^{[1
]}

SANGIORGI, E ^{[1
]}

BUDE, J ^{[1
]}

机构：

[1] UNIV BOLOGNA, I-40126 BOLOGNA, ITALY

来源：

IEEE ELECTRON DEVICE LETTERS | 1993年 / 14卷 / 08期

关键词：

D O I：

10.1109/55.225584

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Simulations incorporating velocity overshoot are used to derive the dependence of deep-submicrometer MOS transconductance on low-field mobility mu(eff) and channel length L(ch). In contrast to strict velocity saturation, saturated transconductance departs from a strict mu(eff)/L(ch) dependence when overshoot is considered. Constraints on mu(eff) derived from conventional scaling laws together with strong mu(eff) dependencies in these regimes emphasize the importance of low-field inversion layer control and optimization. Transconductance in saturation is shown to approach a well-defined limit for very high mu(eff), proportional to L(ch)-2/3.

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收藏

页码：375 / 378

页数：4

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