AN MO GATE 4K STATIC MOS RAM

被引：2
|
作者：
ISHIKAWA, H [1 ]
YAMAMOTO, M [1 ]
TOKUNAGA, H [1 ]
TOYOKURA, N [1 ]
YANAGAWA, F [1 ]
KIUCHI, K [1 ]
KONDO, M [1 ]
机构：
[1] NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO 180,JAPAN
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1980年 / 15卷 / 04期
关键词：
D O I：
10.1109/JSSC.1980.1051450
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：651 / 655
页数：5
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