INTERFACIAL SEGREGATION IN PEROVSKITES .3. MICROSTRUCTURE AND ELECTRICAL-PROPERTIES

被引：152
作者：
DESU, SB
PAYNE, DA
机构：
[1] UNIV ILLINOIS,DEPT MAT SCI & ENGN,URBANA,IL 61801
[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
来源：
JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1990年 / 73卷 / 11期
关键词：
electrical properties; interfaces; microstructure; perovskites; segregation;
D O I：
10.1111/j.1151-2916.1990.tb06468.x
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A model is proposed to relate segregation of dopants with the development of fine ceramic microstructures and electrical properties in polycrystalline donor‐doped BaTiO3. As the average dopant concentration is increased, the dopant concentration at the grain boundary increases compared with the bulk. This has two important effects: (1) dopant incorporation at the grain boundary shifts from electronic to vacancy compensation and the formation of high‐resistive layers, and (2) grain‐boundary mobility is impeded and grain growth retarded with increased dopant additions. Thus, for high dopant concentrations, donor‐doped BaTiO3 becomes insulating. The model discusses in detail the nonequilibrium heterogeneous defect chemistry as a function of thermal‐processing and accounts for barrier layer phenomena. Copyright © 1990, Wiley Blackwell. All rights reserved
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页码：3407 / 3415
页数：9
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