EFFECTS OF WATER-VAPOR AND OXYGEN EXCITATION ON OXIDATION OF GAAS, GAP AND INSB SURFACES STUDIED BY X-RAY PHOTOEMISSION SPECTROSCOPY

被引：14

作者：

IWASAKI, H ^{[1
]}

MIZOKAWA, Y ^{[1
]}

NISHITANI, R ^{[1
]}

NAKAMURA, S ^{[1
]}

机构：

[1] UNIV OSAKA PREFECTURE,JR COLL ENGN,IKUNO,OSAKA 544,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1979年 / 18卷 / 08期

关键词：

D O I：

10.1143/JJAP.18.1525

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Addition of water vapor to oxygen enhances the room temperature oxidation of the (110) cleaved surfaces of compound semiconductors. The chemical shifts caused by wet oxidation are larger than those caused by dry oxidation for InSb, but are approximately equal for GaAs and GaP. The excitation of dry oxygen by a Tesla transformer enhances the oxidation much more and also causes higher oxidized states than those produced by dry oxidation at room temperature. The oxidation behaviors of the semiconductors under various oxidation conditions are discussed. © 1979 IOP Publishing Ltd.

引用

页码：1525 / 1529

页数：5

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