SELF-CONSISTENT PSEUDOPOTENTIAL CALCULATION FOR THE ELECTRONIC-STRUCTURE OF A (INAS)1(GAAS)1 MONOLAYER SUPERLATTICE

被引：22
|
作者：
TAGUCHI, A
OHNO, T
机构：
来源：
PHYSICAL REVIEW B | 1987年 / 36卷 / 03期
关键词：
D O I：
10.1103/PhysRevB.36.1696
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
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页码：1696 / 1702
页数：7
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