Hydrogen states and passivation in silicon

被引：3

作者：

Mukashev, BN

Tokmoldin, SZ

机构：

来源：

ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4 | 1995年 / 196-卷

关键词：

atomic hydrogen states; bonding; bistability; electronic structure; passivation;

D O I：

10.4028/www.scientific.net/MSF.196-201.843

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

IR studies of an atomic hydrogen states in silicon are performed. The nature of hydrogen bonding, bistability, electronic structure and mechanisms of its interactions with defects and impurities are discussed.

引用

页码：843 / 847

页数：5

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