BREAKDOWN VOLTAGE OF GRADE GALLIUM ARSENIDE P-N JUNCTIONS

被引:15
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KRESSEL, H
BLICHER, A
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10.1063/1.1702778
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O59 [应用物理学];
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页码:2495 / &
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CHYNOWETH, AG ;
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[2]   AVALANCHE BREAKDOWN IN SILICON [J].
MCKAY, KG .
PHYSICAL REVIEW, 1954, 94 (04) :877-884
[3]   SILICON DIFFUSED JUNCTION AVALANCHE DIODES [J].
VELORIC, HS ;
SMITH, KD .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (04) :222-226