In-Situ RHEED Study of the Alloying of CdSe/ZnSe Quantum Dot Structure Fabricated by an Alternate Molecular Beam Supply

被引：0

作者：

Ohishi, M. ^{[1
]}

Banden, Y. ^{[1
]}

Yoneta, M. ^{[1
]}

Saito, H. ^{[1
]}

机构：

[1] Okayama Univ Sci, Dept Appl Phys, 1-1 Ridai Cho, Okayama 7000005, Japan

来源：

E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY | 2010年 / 8卷

关键词：

Reflection high-energy electron diffraction; CdSe; Molecular beam epitaxy; Self-assembly; Photoluminescence;

D O I：

10.1380/ejssnt.2010.283

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

CdSe quantum dots (QDs) were fabricated by using an alternate supply of Se- and Cd-molecular beams on ZnSe (100) films. The reflection high-energy electron diffraction and its specular beam intensity were used to investigate the moment of dot-generation, dot-coalescence and the alloying of the CdSe wetting layer (WL) and QDs due to the Zn beam irradiation. The alloying of CdSe WL under Zn beam irradiation, increased the critical thickness for the CdSe QDs generation, and the composition of the alloy depended on the irradiation period of Zn beam. The alloying speed of CdSe QDs was found to be fairly fast, but the alloying stopped at a certain Zn composition (self-limiting of diffusion).

引用

页码：283 / 286

页数：4