INTRINSIC OPTICAL ABSORPTION IN GERMANIUM-SILICON ALLOYS

被引：574
作者：
BRAUNSTEIN, R
MOORE, AR
HERMAN, F
机构：
来源：
PHYSICAL REVIEW | 1958年 / 109卷 / 03期
关键词：
D O I：
10.1103/PhysRev.109.695
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：695 / 710
页数：16
相关论文
共 40 条
[1]   DEFINITION OF ENERGY BANDS IN THE PRESENCE OF AN EXTERNAL FORCE FIELD [J].
ADAMS, EN .
PHYSICAL REVIEW, 1957, 107 (03) :698-701
[2]   VASILEFF CALCULATION OF ELECTRONIC SELF-ENERGY IN SEMICONDUCTORS [J].
ADAMS, EN .
PHYSICAL REVIEW, 1957, 107 (03) :671-671
[3]  
[Anonymous], COMMUNICATION
[4]  
ANTONCIK E, 1955, CZECH J PHYS, V5, P4
[5]  
BARDEEN, 1956, 1954 P C PHOT ATL CI, P146
[6]  
BURSTEIN, 1956, 1954 P C PHOT ATL CI, P353
[7]  
CHRISTIAN SD, UNPUBLISHED
[8]   INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J].
DASH, WC ;
NEWMAN, R .
PHYSICAL REVIEW, 1955, 99 (04) :1151-1155
[9]  
DEXTER DL, 1956, 1954 P C PHOT ATL CI, P155
[10]  
DRESSELHAUS G, 1956, J PHYS CHEM SOLIDS, V1, P15
1234