FIELD DISTRIBUTION NEAR-SURFACE OF BEVELED P-N-JUNCTIONS IN HIGH-VOLTAGE DEVICES

被引：50

作者：

CORNU, J ^{[1
]}

机构：

[1] BROWN BOVERI RES CTR,BADEN 5401,SWITZERLAND

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1973年 / ED20卷 / 04期

关键词：

D O I：

10.1109/T-ED.1973.17654

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：347 / 352

页数：6

共 50 条

[21] THERMALLY ASSISTED FIELD-EMISSION NEAR PRECIPITATES IN P-N-JUNCTIONS
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[22] JUNCTION TERMINATION EXTENSION FOR NEAR-IDEAL BREAKDOWN VOLTAGE IN P-N-JUNCTIONS
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[24] POTENTIAL DISTRIBUTIONS IN SURFACE P-N-JUNCTIONS
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[28] INFLUENCE OF ABSORPTION ON NEAR-FIELD OF SPONTANEOUSLY EMITTING GAAS P-N-JUNCTIONS
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[29] AN ALGORITHM FOR TWO-DIMENSIONAL SIMULATION OF REVERSE-BIASED BEVELED P-N-JUNCTIONS
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[30] TEMPERATURE DEPENDENCE OF AVALANCHE BREAKDOWN VOLTAGE IN P-N-JUNCTIONS
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