FIELD DISTRIBUTION NEAR-SURFACE OF BEVELED P-N-JUNCTIONS IN HIGH-VOLTAGE DEVICES

被引：50

作者：

CORNU, J ^{[1
]}

机构：

[1] BROWN BOVERI RES CTR,BADEN 5401,SWITZERLAND

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1973年 / ED20卷 / 04期

关键词：

D O I：

10.1109/T-ED.1973.17654

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：347 / 352

页数：6

共 50 条

[1] DEPLETION LAYER CHARACTERISTICS AT SURFACE OF BEVELED HIGH-VOLTAGE P-N-JUNCTIONS
BAKOWSKI, M
LUNDSTROM, KI
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (06) : 550 - 563
[2] MULTISTEP FIELD PLATES FOR HIGH-VOLTAGE PLANAR P-N-JUNCTIONS
FEILER, W
FALCK, E
GERLACH, W
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (06) : 1514 - 1520
[3] THEORY OF CURRENT-VOLTAGE CHARACTERISTIC OF HIGH-VOLTAGE P-N-JUNCTIONS AND DEVICES
MNATZAKANOV, TT
RADIOTEKHNIKA I ELEKTRONIKA, 1977, 22 (02): : 366 - 373
[4] PLANAR TERMINATION FOR HIGH-VOLTAGE P-N-JUNCTIONS
GEORGESCU, S
DUNCA, T
SDRULLA, D
GHITA, I
SOLID-STATE ELECTRONICS, 1986, 29 (10) : 1035 - 1039
[5] CHARACTERISTICS OF MICROPLASMAS IN HIGH-VOLTAGE SILICON P-N-JUNCTIONS
KUZMIN, VA
KRYUKOVA, NN
KYUREGYAN, AS
SOROKIN, YG
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (07): : 766 - 769
[6] EXPERIMENTAL VERIFICATION OF INHOMOGENEOUS FIELD DISTRIBUTION IN NEGATIVELY BEVELLED HIGH-VOLTAGE P-N-JUNCTIONS BY MEANS OF PHOTOMULTIPLICATION
BAKOWSKI, M
ELECTRONICS LETTERS, 1974, 10 (15) : 292 - 293
[7] METHOD FOR DETERMINING POSITION OF MICROPLASMA IN HIGH-VOLTAGE P-N-JUNCTIONS
MAGDEN, IN
SAFONOV, VA
INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 1976, 19 (01) : 255 - 256
[8] INFLUENCE OF BEVEL ANGLE AND SURFACE CHARGE ON BREAKDOWN VOLTAGE OF NEGATIVELY BEVELED DIFFUSED P-N-JUNCTIONS
BAKOWSKI, M
HANSSON, B
SOLID-STATE ELECTRONICS, 1975, 18 (7-8) : 651 - &
[9] INFLUENCE OF INTERCONNECTIONS ONTO THE BREAKDOWN VOLTAGE OF PLANAR HIGH-VOLTAGE P-N-JUNCTIONS
FALCK, E
GERLACH, W
KOREC, J
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (02) : 439 - 447
[10] AVALANCHE BREAKDOWN IN HIGH-VOLTAGE LARGE AREA SILICON P-N-JUNCTIONS
AKIMOV, PV
GREKHOV, IV
SEREZHKIN, YN
RADIOTEKHNIKA I ELEKTRONIKA, 1975, 20 (02): : 373 - 380

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