POST-HYDROGENATION OF CVD DEPOSITED A-SI FILMS

被引:73
作者
SOL, N
KAPLAN, D
DIEUMEGARD, D
DUBREUIL, D
机构
关键词
D O I
10.1016/0022-3093(80)90609-2
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
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页码:291 / 296
页数:6
相关论文
共 9 条
[1]   SIMS ANALYSIS OF DEUTERIUM DIFFUSION IN HYDROGENATED AMORPHOUS SILICON [J].
CARLSON, DE ;
MAGEE, CW .
APPLIED PHYSICS LETTERS, 1978, 33 (01) :81-83
[2]  
DIEUMEGARD D, 1978, 4TH INT C ION BEAM A
[3]   DOPING AND ANNEALING EFFECTS ON ESR IN CHEMICALLY VAPOR-DEPOSITED AMORPHOUS SILICON [J].
HASEGAWA, S ;
KASAJIMA, T ;
SHIMIZU, T .
SOLID STATE COMMUNICATIONS, 1979, 29 (01) :13-16
[4]  
HIROSE M, 1978, 7TH P INT C LIQ AM S, P352
[5]   HYDROGENATION OF EVAPORATED AMORPHOUS SILICON FILMS BY PLASMA TREATMENT [J].
KAPLAN, D ;
SOL, N ;
VELASCO, G ;
THOMAS, PA .
APPLIED PHYSICS LETTERS, 1978, 33 (05) :440-442
[6]   HYDROGENATION AND DEHYDROGENATION OF AMORPHOUS AND CRYSTALLINE SILICON [J].
PANKOVE, JI ;
LAMPERT, MA ;
TARNG, ML .
APPLIED PHYSICS LETTERS, 1978, 32 (07) :439-441
[7]   DOPED AMORPHOUS-SEMICONDUCTORS [J].
SPEAR, WE .
ADVANCES IN PHYSICS, 1977, 26 (06) :811-845
[8]  
TANIGUCHI M, 1978, 4TH P INT C VAP GROW
[9]  
TANIGUCHI M, 1978, J CRYSTAL GROWTH, P45