VERTICAL-CAVITY, ROOM-TEMPERATURE STIMULATED-EMISSION FROM PHOTOPUMPED GAN FILMS DEPOSITED OVER SAPPHIRE SUBSTRATES USING LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引:116
作者
KHAN, MA
OLSON, DT
VANHOVE, JM
KUZNIA, JN
机构
关键词
D O I
10.1063/1.105163
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report the first observation of near-UV vertical-cavity stimulated emission from a photopumped GaN epilayer at room temperature. The epilayer was deposited over AIN-coated basal plane sapphire substrate using low-pressure metalorganic chemical vapor deposition. Epitaxy quality of a 1.5-mu-m-thick GaN layer was high enough to achieve stimulated emission at room temperature. The observed near-UV optical emission power was a nonlinear function of the pump power density. At threshold power density, we also observed line narrowing and a shift of the peak UV emission towards longer wavelengths. Data comparing the UV emission for the vertical-cavity and the edge emission geometry are also presented.
引用
收藏
页码:1515 / 1517
页数:3
相关论文
共 8 条
[1]   STIMULATED-EMISSION NEAR ULTRAVIOLET AT ROOM-TEMPERATURE FROM A GAN FILM GROWN ON SAPPHIRE BY MOVPE USING AN AIN BUFFER LAYER [J].
AMANO, H ;
ASAHI, T ;
AKASAKI, I .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1990, 29 (02) :L205-L206
[2]   STIMULATED-EMISSION OF GAN UNDER HIGH ONE AND 2 QUANTUM EXCITATION [J].
CATALANO, IM ;
CINGOLANI, A ;
FERRARA, M ;
LUGARA, M ;
MINAFRA, A .
SOLID STATE COMMUNICATIONS, 1978, 25 (05) :349-351
[3]   ELECTRON-HOLE PLASMA GENERATION IN GALLIUM NITRIDE [J].
CINGOLANI, R ;
FERRARA, M ;
LUGARA, M .
SOLID STATE COMMUNICATIONS, 1986, 60 (09) :705-708
[4]   STIMULATED EMISSION AND LASER ACTION IN GALLIUM NITRIDE [J].
DINGLE, R ;
SHAKLEE, KL ;
LEHENY, RF ;
ZETTERSTROM, RB .
APPLIED PHYSICS LETTERS, 1971, 19 (01) :5-+
[5]  
GERSHENZON M, 1981, 1981 P INT OPT WORKS, P139
[6]  
KHAN M, UNPUB, P18702
[7]  
KHAN MA, 1991, APPL PHYS LETT, V58, P526, DOI 10.1063/1.104575
[8]   ROOM-TEMPERATURE CONTINUOUS-WAVE VERTICAL-CAVITY SURFACE-EMITTING GAAS INJECTION-LASERS [J].
TAI, K ;
FISCHER, RJ ;
SEABURY, CW ;
OLSSON, NA ;
HUO, TCD ;
OTA, Y ;
CHO, AY .
APPLIED PHYSICS LETTERS, 1989, 55 (24) :2473-2475