RELAXED GEXSI1-X FILMS GROWN BY RAPID THERMAL-PROCESSING CHEMICAL VAPOR-DEPOSITION

被引：16
作者：
JUNG, KH
KIM, YM
KWONG, DL
机构：
[1] Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas at Austin, Austin
来源：
APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 18期
关键词：
D O I：
10.1063/1.103096
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
High quality, epitaxial, relaxed GexSi1-x layers have been grown by rapid thermal processing chemical vapor deposition. Relaxation is believed to be due primarily to the high deposition temperature of 1000 °C and occurred through the formation of an asymmetric misfit dislocation network aligned along the 〈110〉 directions and confined to the interface. The only other defects observed were single threading dislocations at the ends of misfit dislocations.
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页码：1775 / 1777
页数：3
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