A SELECTIVE DRY-ETCH TECHNIQUE FOR GAAS-MESFET GATE RECESSING

被引：12

作者：

CHANG, EY

VANHOVE, JM

PANDE, KP

机构：

[1] Unisys Corp, St. Paul, MN, USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 10期

关键词：

D O I：

10.1109/16.7356

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1580 / 1584

页数：5

共 7 条

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