EPITAXIAL GROWTH WITH LIGHT IRRADIATION

被引：71

作者：

KUMAGAWA, M

SUNAMI, H

TERASAKI, T

NISHIZAWA, JI

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1968年 / 7卷 / 11期

关键词：

D O I：

10.1143/JJAP.7.1332

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1332 / +

页数：1

共 18 条

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[3]

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[5]

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[6]

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[7] EPITAXIAL VAPOR GROWTH OF GE SINGLE CRYSTALS IN A CLOSED-CYCLE PROCESS [J].

MARINACE, JC .

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[8] INFRARED SPECTRA AND MOLECULAR STRUCTURES OF SIH3F, SIH3CL, AND SIH3BR [J].

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[9]

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[10]

NISHIZAWA J, 1961, J METALL SOC JPN, V25, P149

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