AN ANALYTICAL MODEL OF CONDUCTANCE AND TRANSCONDUCTANCE FOR DEPLETION-MODE MOS-TRANSISTORS

被引:6
作者
GHIBAUDO, G
机构
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1987年 / 103卷 / 01期
关键词
D O I
10.1002/pssa.2211030137
中图分类号
T [工业技术];
学科分类号
08 ;
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页码:317 / 325
页数:9
相关论文
共 11 条
[1]   CHARGE-SHEET MODEL OF MOSFET [J].
BREWS, JR .
SOLID-STATE ELECTRONICS, 1978, 21 (02) :345-355
[2]   AN ANALYTICAL MODEL OF CONDUCTANCE AND TRANSCONDUCTANCE FOR ENHANCED-MODE MOSFETS [J].
GHIBAUDO, G .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 95 (01) :323-335
[3]  
GHIBAUDO G, IN PRESS
[4]   EXPERIMENTAL STUDIES ON 1-F NOISE [J].
HOOGE, FN ;
KLEINPENNING, TGM ;
VANDAMME, LKJ .
REPORTS ON PROGRESS IN PHYSICS, 1981, 44 (05) :479-532
[5]  
KIREEV PS, 1975, PHYSICS SEMICONDUCTO
[6]   MODELING OF CARRIER MOBILITY AGAINST CARRIER CONCENTRATION IN ARSENIC-DOPED, PHOSPHORUS-DOPED, AND BORON-DOPED SILICON [J].
MASETTI, G ;
SEVERI, M ;
SOLMI, S .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (07) :764-769
[8]   ELECTRON-MOBILITY IN INVERSION AND ACCUMULATION LAYERS ON THERMALLY OXIDIZED SILICON SURFACES [J].
SUN, SC ;
PLUMMER, JD .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1497-1508
[9]  
SZE SM, 1981, PHYSICS SEMICONDUCTO
[10]   ELECTRICAL-PROPERTIES OF HALOGEN LAMP RECRYSTALLIZED SILICON FILMS ON SIO2 [J].
VU, DP ;
CHANTRE, A ;
MINGAM, H ;
VINCENT, G .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) :1682-1686