OXIDATION-STATES AND FERMI-LEVEL PINNING ON GAAS(1 1 0) SURFACE

被引：12
|
作者：
BERKOVITS, VL
KISELEV, VA
MINASHVILI, TA
SAFAROV, VI
机构：
[1] Acad of Sciences of the USSR, Leningrad, USSR, Acad of Sciences of the USSR, Leningrad, USSR
来源：
SOLID STATE COMMUNICATIONS | 1988年 / 65卷 / 05期
关键词：
CRYSTALS; -; Oxidation; OXYGEN;
D O I：
10.1016/0038-1098(88)90722-3
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Fermi-level pinning produced by oxygen adsorption on the GaAs(110) cleavage surface both at 300 (in chamber) and 77 K (in liquid N//2) has been studied using the polarization modulated reflectivity technique. Specific transformations of spectra of doped samples have made it possible to follow the kinetics of barrier formation. It has been found that the creation of acceptor and donor pinning levels on the surface correlates with two essentially different oxidation states. The first is the chemisorption of atomic oxygen. We suggest that it forms patches on the surface. The second phase is supposed to be a surface oxide.
引用
收藏
页码：385 / 388
页数：4
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