METAL-INSULATOR PHASE-TRANSITION IN VO2 - INFLUENCE OF FILM THICKNESS AND SUBSTRATE

被引：26

作者：

BABKIN, EV

CHARYEV, AA

DOLGAREV, AP

URINOV, HO

机构：

[1] L.V. Kirensky Institute of Physics, U.S.S.R. Academy of Sciences, Siberian Branch, Krasnoyarsk

来源：

THIN SOLID FILMS | 1987年 / 150卷 / 01期

关键词：

D O I：

10.1016/0040-6090(87)90304-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

VO2 films were prepared by the pyrolysis of vanadium acetylacetonate on different substrates. It is shown that the temperature Tk of the metal-insulator phase transition of these films is always lower than that in the bulk material and depends on the choice of substrate. The value of Tk for these films on the same substrate decreases monotonically with decreasing film thickness. These effects are related to substrate-film interactions. © 1987.

引用

页码：11 / 14

页数：4

共 7 条

[1] EPITAXIAL-FILMS OF IRON-OXIDES GROWN BY THE METHOD OF CHEMICAL-TRANSPORT REACTION [J].