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EFFECT OF CHLORINE ON NEGATIVE BIAS INSTABILITY IN MOS STRUCTURES
被引:9
作者
:
HESS, DW
论文数:
0
引用数:
0
h-index:
0
机构:
FAIRCHILD CAMERA & INSTR CORP,RES & DEV LAB,PALO ALTO,CA 94304
FAIRCHILD CAMERA & INSTR CORP,RES & DEV LAB,PALO ALTO,CA 94304
HESS, DW
[
1
]
机构
:
[1]
FAIRCHILD CAMERA & INSTR CORP,RES & DEV LAB,PALO ALTO,CA 94304
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1977年
/ 124卷
/ 05期
关键词
:
D O I
:
10.1149/1.2133397
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:740 / 743
页数:4
相关论文
共 17 条
[11]
STABILIZATION OF MOS DEVICES
[J].
HOFSTEIN, SR
论文数:
0
引用数:
0
h-index:
0
HOFSTEIN, SR
.
SOLID-STATE ELECTRONICS,
1967,
10
(07)
:657
-+
[12]
KRIEGLER RJ, 1973, DENKI KAGAKU, V41, P466
[13]
INVESTIGATION OF SILICON-SILICON DIOXIDE INTERFACE USING MOS STRUCTURE
[J].
MIURA, Y
论文数:
0
引用数:
0
h-index:
0
MIURA, Y
;
MATUKURA, Y
论文数:
0
引用数:
0
h-index:
0
MATUKURA, Y
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1966,
5
(02)
:180
-&
[14]
SURFACE STATE GENERATION IN MOS STRUCTURE BY APPLYING HIGH-FIELD TO SIO2 FILM
[J].
NAKAGIRI, M
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON ELECT CO LTD,IC DIV,SHIMONUMABE,KAWASAKI,JAPAN
NIPPON ELECT CO LTD,IC DIV,SHIMONUMABE,KAWASAKI,JAPAN
NAKAGIRI, M
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1974,
13
(10)
:1610
-1617
[15]
DIELECTRIC-BREAKDOWN PROPERTIES OF SIO2-FILMS GROWN IN HALOGEN AND HYDROGEN-CONTAINING ENVIRONMENTS
[J].
OSBURN, CM
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
OSBURN, CM
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1974,
121
(06)
:809
-815
[16]
PROPERTIES OF SIO2 GROWN IN PRESENCE OF HCL OR C-12
[J].
VANDERMEULEN, YJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,TJ WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,TJ WATSON RES CTR,YORKTOWN HTS,NY 10598
VANDERMEULEN, YJ
;
OSBURN, CM
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,TJ WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,TJ WATSON RES CTR,YORKTOWN HTS,NY 10598
OSBURN, CM
;
ZIEGLER, JF
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,TJ WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,TJ WATSON RES CTR,YORKTOWN HTS,NY 10598
ZIEGLER, JF
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1975,
122
(02)
:284
-290
[17]
WORK FUNCTION DIFFERENCE OF MOS-SYSTEM WITH ALUMINUM FIELD PLATES AND POLYCRYSTALLINE SILICON FIELD PLATES
[J].
WERNER, WM
论文数:
0
引用数:
0
h-index:
0
机构:
RHEIN WESTFAL TH,INST THEORET ELEKTR,51 AACHEN,WEST GERMANY
RHEIN WESTFAL TH,INST THEORET ELEKTR,51 AACHEN,WEST GERMANY
WERNER, WM
.
SOLID-STATE ELECTRONICS,
1974,
17
(08)
:769
-775
←
1
2
→
共 17 条
[11]
STABILIZATION OF MOS DEVICES
[J].
HOFSTEIN, SR
论文数:
0
引用数:
0
h-index:
0
HOFSTEIN, SR
.
SOLID-STATE ELECTRONICS,
1967,
10
(07)
:657
-+
[12]
KRIEGLER RJ, 1973, DENKI KAGAKU, V41, P466
[13]
INVESTIGATION OF SILICON-SILICON DIOXIDE INTERFACE USING MOS STRUCTURE
[J].
MIURA, Y
论文数:
0
引用数:
0
h-index:
0
MIURA, Y
;
MATUKURA, Y
论文数:
0
引用数:
0
h-index:
0
MATUKURA, Y
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1966,
5
(02)
:180
-&
[14]
SURFACE STATE GENERATION IN MOS STRUCTURE BY APPLYING HIGH-FIELD TO SIO2 FILM
[J].
NAKAGIRI, M
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON ELECT CO LTD,IC DIV,SHIMONUMABE,KAWASAKI,JAPAN
NIPPON ELECT CO LTD,IC DIV,SHIMONUMABE,KAWASAKI,JAPAN
NAKAGIRI, M
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1974,
13
(10)
:1610
-1617
[15]
DIELECTRIC-BREAKDOWN PROPERTIES OF SIO2-FILMS GROWN IN HALOGEN AND HYDROGEN-CONTAINING ENVIRONMENTS
[J].
OSBURN, CM
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
OSBURN, CM
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1974,
121
(06)
:809
-815
[16]
PROPERTIES OF SIO2 GROWN IN PRESENCE OF HCL OR C-12
[J].
VANDERMEULEN, YJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,TJ WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,TJ WATSON RES CTR,YORKTOWN HTS,NY 10598
VANDERMEULEN, YJ
;
OSBURN, CM
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,TJ WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,TJ WATSON RES CTR,YORKTOWN HTS,NY 10598
OSBURN, CM
;
ZIEGLER, JF
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,TJ WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,TJ WATSON RES CTR,YORKTOWN HTS,NY 10598
ZIEGLER, JF
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1975,
122
(02)
:284
-290
[17]
WORK FUNCTION DIFFERENCE OF MOS-SYSTEM WITH ALUMINUM FIELD PLATES AND POLYCRYSTALLINE SILICON FIELD PLATES
[J].
WERNER, WM
论文数:
0
引用数:
0
h-index:
0
机构:
RHEIN WESTFAL TH,INST THEORET ELEKTR,51 AACHEN,WEST GERMANY
RHEIN WESTFAL TH,INST THEORET ELEKTR,51 AACHEN,WEST GERMANY
WERNER, WM
.
SOLID-STATE ELECTRONICS,
1974,
17
(08)
:769
-775
←
1
2
→