STUDY OF THE QUASI-SATURATION EFFECT IN VDMOS TRANSISTORS

被引：72
|
作者：
DARWISH, MN
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 11期
关键词：
D O I：
10.1109/T-ED.1986.22732
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1710 / 1716
页数：7
相关论文
共 50 条
  • [41] Drift Design Impact on Quasi-Saturation & HCI for Scalable N-LDMOS
    Shi, Yun
    Feilchenfeld, Natalie
    Phelps, Rick
    Levy, Max
    Knaipp, Martin
    Minixhofer, Rainer
    2011 IEEE 23RD INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2011, : 215 - 218
  • [42] Compact modeling of high-voltage LDMOS devices including quasi-saturation
    Aarts, ACT
    Kloosterman, WJ
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (04) : 897 - 902
  • [43] Modelling of lightly doped collector of a bipolar transistor operating in quasi-saturation region
    Hassan, MMS
    INTERNATIONAL JOURNAL OF ELECTRONICS, 1999, 86 (01) : 1 - 14
  • [44] Concise transient SPICE model for bipolar power transistor quasi-saturation simulation
    Liang, Y.C., 1600, (70):
  • [45] AN ANALYTICAL QUASI-SATURATION MODEL CONSIDERING HEAT-FLOW FOR A DMOS DEVICE
    LIU, CM
    KUO, JB
    WU, YP
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (06) : 952 - 958
  • [46] Safety controller based on control barrier functions using quasi-saturation function
    Ueki, Satoshi
    Ikeda, Takahiro
    Yamada, Hironao
    ARTIFICIAL LIFE AND ROBOTICS, 2023, 28 (04) : 789 - 796
  • [47] Enhanced, breakdown voltage, diminished quasi-saturation, and self-heating effects in SOI thin-film bipolar transistors for improved reliability: A TCAD simulation study
    Roy, Sukhendu Deb
    Kumar, M. Jagadesh
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2006, 6 (02) : 306 - 314
  • [48] QUASISATURATION EFFECT IN HIGH-VOLTAGE VDMOS TRANSISTORS
    SANCHEZ, JL
    GHARBI, M
    TRANDUC, H
    ROSSEL, P
    IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1985, 132 (01): : 42 - 45
  • [49] QUASI SATURATION MECHANISM IN MOS-TRANSISTORS
    CAQUOT, E
    GUEGAN, G
    GAMBOA, M
    TRANDUC, H
    ROSSEL, P
    REVUE DE PHYSIQUE APPLIQUEE, 1980, 15 (09): : 1445 - 1450
  • [50] On the Quasi-Saturation Behavior of a Novel Vertical Power MOSFET with Self-Aligned Gate
    Cai, W. Z.
    Gogoi, B. P.
    Davies, R. B.
    Lutz, D.
    2010 22ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2010, : 197 - 199
12345