STUDY OF THE QUASI-SATURATION EFFECT IN VDMOS TRANSISTORS

被引：72
|
作者：
DARWISH, MN
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 11期
关键词：
D O I：
10.1109/T-ED.1986.22732
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1710 / 1716
页数：7
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