THE DISTRIBUTION OF CHARGE CONCENTRATION IN INP/SI

被引：13

作者：

BARTELS, A

PEINER, E

KLOCKENBRINK, R

SCHLACHETZKI, A

机构：

[1] Institut für Halbleitertechnik, Technischen Universität Braunschweig, D-38106 Braunschweig

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 78卷 / 01期

关键词：

D O I：

10.1063/1.360655

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The spatial distribution of the charge concentration of InP layers grown on Si substrates by metalorganic vapor-phase epitaxy was investigated. The concentration near the surface and within the bulk of the layer was found to be governed by Si doping out of the ambient gas. Diffusion of Si across the heterointerface which may be partially assisted by dislocations is dominant in a region near the InP/Si interface. In the vicinity of the heterointerface the charge concentration in the InP layer is determined by strong compensation, which is attributed to defects caused by the mismatch of lattice parameter and thermal-expansion coefficient of InP and Si. © 1995 American Institute of Physics.

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页码：224 / 228

页数：5

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