APPEARANCE OF SINGLE-CRYSTALLINE PROPERTIES IN FINE-PATTERNED SI THIN-FILM TRANSISTORS (TFTS) BY SOLID-PHASE CRYSTALLIZATION (SPC)

被引：66
作者：
NOGUCHI, T
机构：
[1] VLSI R and D Laboratories, Sony Corporation, Atsugi, Kanagawa
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1993年 / 32卷 / 11A期
关键词：
TFT; POLYSILICON; MOBILITY; GATE VOLTAGE SWING; GRAIN SIZE; UNIFORMITY; SINGLE CRYSTAL;
D O I：
10.1143/JJAP.32.L1584
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Uniformity of thin film transistor (TFT) characteristics was evaluated by varying the channel size. As channel length decreased and width fell below 1 mum, uniformity was degraded drastically. A few samples showed high-performance characteristics such as sharp gate voltage swing below 100 mV/dec and high mobility as high as 100 cm2 /V.s near room temperature. Upon evaluation of their temperature dependence, the conduction mechanism showed not polycrystalline but single-crystal-like properties in the lattice scattering. The improved TFTs are thought to have been formed in grain boundary-free crystal grains.
引用
收藏
页码：L1584 / L1587
页数：4
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