NEW LIGHT-MODULATOR USING GASE LAYERED CRYSTAL

被引:16
作者
IWAMURA, Y
MORIYAMA, M
WATANABE, N
机构
[1] Department of Electric Engineering, Kanagawa University, Rokkakubashi, Yokohama
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1991年 / 30卷 / 1A期
关键词
GASE; LAYER CRYSTAL; NATURAL SUPERLATTICE; OPTICAL MODULATOR; HE-NE LASER;
D O I
10.1143/JJAP.30.L42
中图分类号
O59 [应用物理学];
学科分类号
摘要
Layered crystals of GaSe are grown by the Bridgman method. Transmission spectra are measured for various sample configurations with respect to the c-axis, applied electric field, direction of incident light and polarization. Absorption edge shifts toward longer wavelength by 20 nm under an electric field of 1 kV/cm, the shift of which is two orders larger than estimated on the Franz-Keldysh mechanism. Switching time is measured to be 53 ns or less.
引用
收藏
页码:L42 / L44
页数:3
相关论文
共 5 条
[1]   ELECTROABSORPTION IN LAMINATED GASEXS1-X SEMICONDUCTORS IN FUNDAMENTAL-ABSORPTION EDGE REGION [J].
ABDULLAYEVA, SG ;
GADJIYEV, VA ;
KERIMOVA, TG ;
SALAYEV, EY .
NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS, 1977, 38 (02) :459-468
[2]   ANOMALOUSLY LARGE SHIFT OF ABSORPTION-EDGE OF GASE-BASED LAYERED CRYSTAL BY APPLIED ELECTRIC-FIELD [J].
IWAMURA, Y ;
MORIYAMA, M ;
WATANABE, N .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1990, 29 (06) :L975-L976
[3]   RESONANT EXCITON IN GASE [J].
MERCIER, A ;
MOOSER, E ;
VOITCHOVSKY, JP .
PHYSICAL REVIEW B, 1975, 12 (10) :4307-4311
[4]   CHARGE TRANSPORT IN LAYER SEMICONDUCTORS [J].
MINDER, R ;
OTTAVIANI, G ;
CANALI, C .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1976, 37 (04) :417-424
[5]   BAND-GAP EXCITONS IN GALLIUM SELENIDE [J].
MOOSER, E ;
SCHLUTER, M .
NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS, 1973, B 18 (01) :164-208