EFFECT OF ANNEALING TEMPERATURE ON CARRIER CONCENTRATION OF HG0.6CD0.4TE

被引：53

作者：

SCHMIT, JL

STELZER, EL

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1978年 / 7卷 / 01期

关键词：

D O I：

10.1007/BF02656021

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：65 / 81

页数：17

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[9] VAPOR-CRYSTAL EQUILIBRIUM AND ELECTRICAL PROPERTIES OF HGTE [J].

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[10]

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