THE ETCHING OF SILICON IN DILUTED SF6 PLASMAS - CORRELATION BETWEEN THE FLUX OF INCIDENT SPECIES AND THE ETCHING KINETICS

被引：38

作者：

MAHI, B

ARNAL, Y

POMOT, C

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 03期

关键词：

D O I：

10.1116/1.583801

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：657 / 666

页数：10

共 20 条

[1] PLASMA-ETCHING - DISCUSSION OF MECHANISMS [J].

COBURN, JW ;

WINTERS, HF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02) :391-403

[2] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING [J].

COBURN, JW ;

WINTERS, HF .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3189-3196

[3] DEPENDENCE OF F-ATOM DENSITY ON PRESSURE AND FLOW-RATE IN CF4 GLOW-DISCHARGES AS DETERMINED BY EMISSION-SPECTROSCOPY [J].

COBURN, JW ;

CHEN, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (02) :353-356

[4]

d'Agostino R., 1984, Plasma Chemistry and Plasma Processing, V4, P165, DOI 10.1007/BF00566839

[5] SPECTROSCOPIC DIAGNOSTICS OF CF4-O2 PLASMAS DURING SI AND SIO2 ETCHING PROCESSES [J].

DAGOSTINO, R ;

CRAMAROSSA, F ;

DEBENEDICTIS, S ;

FERRARO, G .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) :1259-1265

[6]

DAGOSTINO R, 1981, PLASMA CHEM PLASMA P, V1, P365

[7] ANISOTROPIC ETCHING OF SIO2 IN LOW-FREQUENCY CF4/O2 AND NF3/AR PLASMAS [J].

DONNELLY, VM ;

FLAMM, DL ;

DAUTREMONTSMITH, WC ;

WERDER, DJ .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (01) :242-252

[8]

Flamm D.L., 1981, PLASMA CHEM PLASMA P, V1, P317, DOI [10.1007/bf00565992, DOI 10.1007/BF00565992]

[9] ION-ENHANCED GAS-SURFACE CHEMISTRY - THE INFLUENCE OF THE MASS OF THE INCIDENT ION [J].

GERLACHMEYER, U ;

COBURN, JW ;

KAY, E .

SURFACE SCIENCE, 1981, 103 (01) :177-188

[10] MECHANISM OF SILICON ETCHING BY A CF4 PLASMA [J].

MAUER, JL ;

LOGAN, JS ;

ZIELINSKI, LB ;

SCHWARTZ, GC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (05) :1734-1738

← 1 2 →