THE ETCHING OF SILICON IN DILUTED SF6 PLASMAS - CORRELATION BETWEEN THE FLUX OF INCIDENT SPECIES AND THE ETCHING KINETICS

被引:38
作者
MAHI, B
ARNAL, Y
POMOT, C
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 03期
关键词
D O I
10.1116/1.583801
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
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页码:657 / 666
页数:10
相关论文
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