ELECTRON TRANSMISSION THROUGH A SINGLE NONABRUPT GAAS/ALXGA1-XAS BARRIER SUBJECTED TO AN ELECTRIC-FIELD

被引：8

作者：

CONSUELO, M ^{[1
]}

LIMA, A ^{[1
]}

FARIAS, GA ^{[1
]}

FREIRE, VN ^{[1
]}

机构：

[1] UNIV FED MARANHAO, DEPT FIS, BR-65080420 SAO LUIS, MARANHAO, BRAZIL

来源：

PHYSICAL REVIEW B | 1995年 / 52卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.52.5777

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Calculations of the electron transmission through a single nonabrupt GaAs/AlxGa1-xAs barrier subjected to an electric field have been performed. The electron transmission is shown to be strongly dependent on the interface potential and electron effective mass. The overall reduction of the electron transmission due to the electric field is smaller for wide interfaces. Peak-to-valley transmission ratios change considerably with the interfacial width, as well as with the scheme used to describe interfaces.

引用

页码：5777 / 5780

页数：4

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